| PART |
Description |
Maker |
| BAT54A BAT54TA BAT54S BAT54SRS-15 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
Diotec Semiconductor AG
Diodes Incorporated
|
| PBG |
Dual Linear Bar Graph, Two Separate Bar Graphs, Continuous but Precisely Controlled Bar Length
|
Vishay
|
| SSM5G02TU-14 |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5H14F |
Silicon N Channel MOS Type (U-MOS?/Silicon Epitaxial Schottky Barrier Diode
Silicon N Channel MOS Type (U-MOS楼虏)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| RB706F-40 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| 1SS367 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| CCS15S40 |
Schottky Barrier Diode Silicon Epitaxial
|
Toshiba Semiconductor
|
| SCS40STN |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| RB521S-30 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
